Invention Grant
- Patent Title: Laser annealing systems and methods with ultra-short dwell times
- Patent Title (中): 具有超短停留时间的激光退火系统和方法
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Application No.: US13909542Application Date: 2013-06-04
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Publication No.: US08865603B2Publication Date: 2014-10-21
- Inventor: Andrew M. Hawryluk , Serguei Anikitchev
- Applicant: Ultratech, Inc.
- Applicant Address: US CA San Jose
- Assignee: Ultratech, Inc.
- Current Assignee: Ultratech, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Opticus IP Law PLLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/324 ; B23K26/00 ; B23K26/06 ; H01L21/268 ; B23K26/03 ; H01L21/263 ; B23K26/08 ; B23K26/073 ; H01L21/02 ; H01L21/67
Abstract:
Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.
Public/Granted literature
- US20130330844A1 Laser annealing systems and methods with ultra-short dwell times Public/Granted day:2013-12-12
Information query
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