Invention Grant
US08866124B2 Diodes with native oxide regions for use in memory arrays and methods of forming the same
有权
具有用于存储器阵列的自然氧化物区域的二极管及其形成方法
- Patent Title: Diodes with native oxide regions for use in memory arrays and methods of forming the same
- Patent Title (中): 具有用于存储器阵列的自然氧化物区域的二极管及其形成方法
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Application No.: US13020007Application Date: 2011-02-02
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Publication No.: US08866124B2Publication Date: 2014-10-21
- Inventor: Steven Maxwell , Abhijit Bandyopadhyay , Kun Hou , Er-Xuan Ping , Yung-Tin Chen , Li Xiao
- Applicant: Steven Maxwell , Abhijit Bandyopadhyay , Kun Hou , Er-Xuan Ping , Yung-Tin Chen , Li Xiao
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/868 ; H01L27/102
Abstract:
In a first aspect, a vertical semiconductor diode is provided that includes (1) a first semiconductor layer formed above a substrate; (2) a second semiconductor layer formed above the first semiconductor layer; (3) a first native oxide layer formed above the first semiconductor layer; and (4) a third semiconductor layer formed above the first semiconductor layer, second semiconductor layer and first native oxide layer so as to form the vertical semiconductor diode that includes the first native oxide layer. Numerous other aspects are provided.
Public/Granted literature
- US20120193756A1 DIODES WITH NATIVE OXIDE REGIONS FOR USE IN MEMORY ARRAYS AND METHODS OF FORMING THE SAME Public/Granted day:2012-08-02
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