Invention Grant
US08866127B2 Nitride semiconductor light-emitting element including Si-doped layer, and light source
有权
包含Si掺杂层的氮化物半导体发光元件和光源
- Patent Title: Nitride semiconductor light-emitting element including Si-doped layer, and light source
- Patent Title (中): 包含Si掺杂层的氮化物半导体发光元件和光源
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Application No.: US14064451Application Date: 2013-10-28
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Publication No.: US08866127B2Publication Date: 2014-10-21
- Inventor: Kunimasa Takahashi , Ryou Kato , Shunji Yoshida , Toshiya Yokogawa
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2012-048324 20120305
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L21/02 ; H01L33/32 ; H01L33/06 ; H01L33/14 ; H01L33/16 ; H01L33/00
Abstract:
A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an InyGa1-yN (where 0
Public/Granted literature
- US20140048771A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE Public/Granted day:2014-02-20
Information query
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