Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13727027Application Date: 2012-12-26
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Publication No.: US08866139B2Publication Date: 2014-10-21
- Inventor: Tsunehiro Ino
- Applicant: Tsunehiro Ino
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-051492 20120308
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/788 ; H01L29/51 ; H01L29/423 ; H01L29/66 ; B82Y10/00
Abstract:
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer; a charge storage film that is formed on the first insulating film, includes C60 fullerenes, and is not less than 0.5 monolayer but is less than 1.0 monolayer; a second insulating film formed on the charge storage film; and a control electrode formed on the second insulating film.
Public/Granted literature
- US20130234130A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-09-12
Information query
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