Invention Grant
- Patent Title: Method and system for a GaN self-aligned vertical MESFET
- Patent Title (中): GaN自对准垂直MESFET的方法和系统
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Application No.: US13335572Application Date: 2011-12-22
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Publication No.: US08866147B2Publication Date: 2014-10-21
- Inventor: Richard J. Brown , Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , David P. Bour
- Applicant: Richard J. Brown , Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , David P. Bour
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/20 ; H01L29/808 ; H01L29/812 ; H01L29/10 ; H01L29/16
Abstract:
A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.
Public/Granted literature
- US20130161635A1 METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET Public/Granted day:2013-06-27
Information query
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