Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12881428Application Date: 2010-09-14
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Publication No.: US08866179B2Publication Date: 2014-10-21
- Inventor: Yoshiaki Sugizaki , Susumu Obata
- Applicant: Yoshiaki Sugizaki , Susumu Obata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-120262 20100526
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/62 ; H01L33/48 ; H01L33/00 ; H05K3/34 ; H01L33/54

Abstract:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a resin layer and a conductive material. The conductive material is provided on a surface of the resin layer between the first metal pillar and the second metal pillar, and electrically connects the first metal pillar and the second metal pillar.
Public/Granted literature
- US20110291148A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-12-01
Information query
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