Invention Grant
US08866179B2 Semiconductor light emitting device and method for manufacturing same 有权
半导体发光器件及其制造方法

Semiconductor light emitting device and method for manufacturing same
Abstract:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a resin layer and a conductive material. The conductive material is provided on a surface of the resin layer between the first metal pillar and the second metal pillar, and electrically connects the first metal pillar and the second metal pillar.
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