Invention Grant
- Patent Title: Group III nitride semiconductor light-emitting device
- Patent Title (中): III族氮化物半导体发光器件
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Application No.: US12067350Application Date: 2006-09-20
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Publication No.: US08866186B2Publication Date: 2014-10-21
- Inventor: Gaku Oriji , Koji Kamei , Hisayuki Miki , Akihiro Matsuse
- Applicant: Gaku Oriji , Koji Kamei , Hisayuki Miki , Akihiro Matsuse
- Applicant Address: JP Aichi
- Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee Address: JP Aichi
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-271356 20050920; JP2005-273711 20050921
- International Application: PCT/JP2006/319089 WO 20060920
- International Announcement: WO2007/034971 WO 20070329
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/78 ; H01L33/20 ; H01L33/38
Abstract:
The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device.The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.
Public/Granted literature
- US20100181595A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2010-07-22
Information query
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