Invention Grant
- Patent Title: Photodetector structures including cross-sectional waveguide boundaries
- Patent Title (中): 光检测器结构包括横截面波导边界
-
Application No.: US13650947Application Date: 2012-10-12
-
Publication No.: US08866187B2Publication Date: 2014-10-21
- Inventor: Kyoung Won Na , Pil-Kyu Kang , Seong Gu Kim , Yong Hwack Shin , Ho-Chul Ji , Jung Hyung Pyo , Kyoung Ho Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0105237 20111014
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L31/0232 ; H01L31/18 ; G02B6/12 ; H01L31/103 ; G02B6/132 ; G02B6/136
Abstract:
A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.
Public/Granted literature
- US20130092980A1 PHOTODETECTOR STRUCTURES INCLUDING CROSS-SECTIONAL WAVEGUIDE BOUNDARIES Public/Granted day:2013-04-18
Information query
IPC分类:
