Invention Grant
US08866190B2 Methods of combining silicon and III-nitride material on a single wafer
有权
在单个晶片上组合硅和III族氮化物材料的方法
- Patent Title: Methods of combining silicon and III-nitride material on a single wafer
- Patent Title (中): 在单个晶片上组合硅和III族氮化物材料的方法
-
Application No.: US11452549Application Date: 2006-06-14
-
Publication No.: US08866190B2Publication Date: 2014-10-21
- Inventor: Mike Briere
- Applicant: Mike Briere
- Applicant Address: US CA El Segundo
- Assignee: International Rectifler Corporation
- Current Assignee: International Rectifler Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L29/04 ; H01L29/267 ; H01L29/20 ; H01L29/16
Abstract:
A semiconductor device that includes one semiconductor device formed in one semiconductor material and a second semiconductor device formed in another semiconductor material on a common substrate, and a method of fabricating the semiconductor device.
Public/Granted literature
- US20060289876A1 Methods of combining silicon and III-Nitride material on a single wafer Public/Granted day:2006-12-28
Information query
IPC分类:
