Invention Grant
US08866207B2 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
有权
具有垂直磁各向异性的磁性堆叠，用于自旋动量传递磁阻随机存取存储器
- Patent Title: Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
- Patent Title (中): 具有垂直磁各向异性的磁性堆叠，用于自旋动量传递磁阻随机存取存储器
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Application No.: US13602533Application Date: 2012-09-04
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Publication No.: US08866207B2Publication Date: 2014-10-21
- Inventor: Guohan Hu , Janusz J. Nowak , Philip L. Trouilloud , Daniel C. Worledge
- Applicant: Guohan Hu , Janusz J. Nowak , Philip L. Trouilloud , Daniel C. Worledge
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L43/08 ; G11C11/16 ; H01L43/10 ; H01L43/12
Abstract:
A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
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