Power semiconductor devices and fabrication methods

Invention Grant

US08866252B2 Power semiconductor devices and fabrication methods 有权

Title translation: 功率半导体器件及其制造方法

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Patent Title: Power semiconductor devices and fabrication methods
Patent Title (中): 功率半导体器件及其制造方法
Application No.: US13233672

Application Date: 2011-09-15
Publication No.: US08866252B2

Publication Date: 2014-10-21
Inventor: Tanya Trajkovic , Florin Udrea , Vasantha Pathirana , Nishad Udugampola
Applicant: Tanya Trajkovic , Florin Udrea , Vasantha Pathirana , Nishad Udugampola
Applicant Address: GB Cambridge
Assignee: Cambridge Semiconductor Limited
Current Assignee: Cambridge Semiconductor Limited
Current Assignee Address: GB Cambridge
Agency: Tarolli, Sundheim, Covell & Tummino LLP
Main IPC: H01L23/58
IPC: H01L23/58 ; H01L29/66 ; H01L29/78 ; H01L29/739 ; H01L29/10 ; H01L29/06 ; H01L29/423

Power semiconductor devices and fabrication methods

Abstract:

We describe a RESURF semiconductor device having an n-drift region with a p-top layer and in which a MOS (Metal Oxide Semiconductor) channel of the device is formed within the p-top layer.

Abstract(Chinese):

我们描述了具有p顶层的n-漂移区的RESURF半导体器件，并且其中在该p顶层中形成该器件的MOS（金属氧化物半导体）沟道。

Public/Granted literature

US20130069712A1 POWER SEMICONDUCTOR DEVICES AND FABRICATION METHODS Public/Granted day:2013-03-21

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/58	.其他组不包含的，用于半导体器件的电结构装置