Invention Grant
US08866255B2 Semiconductor device with staggered oxide-filled trenches at edge region
有权
在边缘区域具有交错的氧化物填充沟槽的半导体器件
- Patent Title: Semiconductor device with staggered oxide-filled trenches at edge region
- Patent Title (中): 在边缘区域具有交错的氧化物填充沟槽的半导体器件
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Application No.: US12640532Application Date: 2009-12-17
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Publication No.: US08866255B2Publication Date: 2014-10-21
- Inventor: Hans-Joachim Schulze , Stephan Voss , Markus Zundel
- Applicant: Hans-Joachim Schulze , Stephan Voss , Markus Zundel
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L27/02 ; H01L29/06
Abstract:
A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area.
Public/Granted literature
- US20100155879A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-24
Information query
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