Invention Grant
- Patent Title: Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device
- Patent Title (中): 半导体装置的制造方法，基板处理装置及半导体装置
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Application No.: US13250708Application Date: 2011-09-30
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Publication No.: US08866271B2Publication Date: 2014-10-21
- Inventor: Katsuhiko Yamamoto , Yuji Takebayashi , Tatsuyuki Saito , Masahisa Okuno
- Applicant: Katsuhiko Yamamoto , Yuji Takebayashi , Tatsuyuki Saito , Masahisa Okuno
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-227649 20101007; JP2010-252882 20101111
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L29/02 ; H01L21/02 ; H01L21/67 ; C23C16/56 ; C23C16/40 ; H01L49/02
Abstract:
A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
Public/Granted literature
- US20120086107A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE Public/Granted day:2012-04-12
Information query
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