Invention Grant
- Patent Title: Semiconductor packages and methods of formation thereof
- Patent Title (中): 半导体封装及其形成方法
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Application No.: US13431251Application Date: 2012-03-27
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Publication No.: US08866274B2Publication Date: 2014-10-21
- Inventor: Hermann Gruber , Joachim Mahler , Uwe Hoeckele , Anton Prueckl , Thomas Fischer , Matthias Schmidt
- Applicant: Hermann Gruber , Joachim Mahler , Uwe Hoeckele , Anton Prueckl , Thomas Fischer , Matthias Schmidt
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/00 ; H01L23/31

Abstract:
In one embodiment, a method of forming a semiconductor package comprises providing a first die having contact regions on a top surface but not on an opposite bottom surface. A dielectric liner layer is deposited under the bottom surface of the first die. The first die is attached with the deposited dielectric liner layer to a die paddle of a substrate. A bond layer is disposed between the substrate and the dielectric liner layer.
Public/Granted literature
- US20130256857A1 Semiconductor Packages and Methods of Formation Thereof Public/Granted day:2013-10-03
Information query
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