Invention Grant
- Patent Title: Semiconductor chip device with polymeric filler trench
- Patent Title (中): 具有聚合物填充沟槽的半导体芯片器件
-
Application No.: US14132557Application Date: 2013-12-18
-
Publication No.: US08866276B2Publication Date: 2014-10-21
- Inventor: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
- Applicant: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
- Applicant Address: US CA Sunnyvale CA Markham
- Assignee: Advanced Micro Devices, Inc.,ATI Technologies ULC
- Current Assignee: Advanced Micro Devices, Inc.,ATI Technologies ULC
- Current Assignee Address: US CA Sunnyvale CA Markham
- Agent Timothy M. Honeycutt
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/498 ; H01L25/065 ; H01L23/367 ; H01L23/31 ; H01L23/29 ; H01L23/24 ; H01L23/00 ; H01L23/495 ; H01L23/14
Abstract:
A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
Public/Granted literature
- US20140103506A1 SEMICONDUCTOR CHIP DEVICE WITH POLYMERIC FILLER TRENCH Public/Granted day:2014-04-17
Information query
IPC分类:
