Invention Grant
- Patent Title: Three-dimensional integrated circuits and fabrication thereof
- Patent Title (中): 三维集成电路及其制造
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Application No.: US13553725Application Date: 2012-07-19
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Publication No.: US08866281B2Publication Date: 2014-10-21
- Inventor: Tsai-Yu Huang
- Applicant: Tsai-Yu Huang
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A three-dimensional integrated circuit is disclosed, including a first interposer including through substrate vias (TSV) therein and circuits thereon; a plurality of first active dies disposed on a first side of the first interposer, a plurality of first intermediate interposers, each including through substrate vias (TSV), disposed on the first side of the first interposer, and a second interposer including through substrate vias (TSV) therein and circuits thereon supported by the first intermediate interposers.
Public/Granted literature
- US20140021599A1 THREE-DIMENSIONAL INTEGRATED CIRCUITS AND FABRICATION THEREOF Public/Granted day:2014-01-23
Information query
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