Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US13167086Application Date: 2011-06-23
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Publication No.: US08866293B2Publication Date: 2014-10-21
- Inventor: Yi-Hung Lin , Meng-Tsung Lee , Sui-An Kao , Yi-Hsin Chen , Feng-Lung Chien
- Applicant: Yi-Hung Lin , Meng-Tsung Lee , Sui-An Kao , Yi-Hsin Chen , Feng-Lung Chien
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW100115712A 20110505
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/31

Abstract:
A semiconductor structure includes a semiconductor chip having at least an electrode pad, a first metal layer formed on the electrode pad, a second metal layer completely formed on and in contact with the first metal layer, and a conductive pillar disposed on the second metal layer, where a material of the first metal layer is different from a material of the second metal layer, the first metal layer has a first distribution-projected area larger than a second distribution projected-area of the conductive pillar, and the second metal layer has a third distribution-projected area that is the same as the second distribution-projected area of the conductive pillar.
Public/Granted literature
- US20120280384A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2012-11-08
Information query
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