Invention Grant
- Patent Title: Semiconductor device with configurable through-silicon vias
- Patent Title (中): 具有可配置的硅通孔的半导体器件
-
Application No.: US13094613Application Date: 2011-04-26
-
Publication No.: US08866303B2Publication Date: 2014-10-21
- Inventor: Jin-Ki Kim
- Applicant: Jin-Ki Kim
- Applicant Address: CA Ottawa, Ontario
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa, Ontario
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L25/065 ; G11C5/02 ; G11C29/00 ; G11C8/12 ; H01L23/48
Abstract:
Disclosed is a semiconductor device that comprises a plurality of through-silicon vias (TSVs), a signal line and a selective connector for causing the signal line to be either electrically connected to one of the TSVs or electrically isolated from all of the TSVs, based on a control signal.
Public/Granted literature
- US20110309518A1 SEMICONDUCTOR DEVICE WITH CONFIGURABLE THROUGH-SILICON VIAS Public/Granted day:2011-12-22
Information query
IPC分类:
