Invention Grant
- Patent Title: Substrate, semiconductor construction, and manufacturing method thereof
- Patent Title (中): 基板,半导体构造及其制造方法
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Application No.: US13798486Application Date: 2013-03-13
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Publication No.: US08866313B2Publication Date: 2014-10-21
- Inventor: Tien-Hao Huang , Hsin-Hsie Lee , Yi-Chun Wu , Shang-Yi Wu
- Applicant: Unistars Corporation
- Applicant Address: TW Hsinchu County
- Assignee: Unistars Corporation
- Current Assignee: Unistars Corporation
- Current Assignee Address: TW Hsinchu County
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan Kamrath
- Priority: TW102100808U 20130109
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L21/4763 ; B32B7/12 ; H01L33/00 ; H01L33/48

Abstract:
A substrate includes a die-bonding zone and a glue spreading pattern. The die-bonding zone is set to bond a die. The glue spreading pattern is placed in the die-bonding zone and includes a containing space. The die is placed on the glue spreading pattern, an area of a bottom of the die is greater than an area of an opening of the glue spreading pattern, the containing room of the glue spreading pattern is filled with a glue, and the die is bonded to the substrate by means of the glue.
Public/Granted literature
- US20140191274A1 Substrate, Semiconductor Construction, and Manufacturing Method Thereof Public/Granted day:2014-07-10
Information query
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