Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13871127Application Date: 2013-04-26
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Publication No.: US08866510B2Publication Date: 2014-10-21
- Inventor: Toru Tanabe , Hiroyuki Miyake
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LIP
- Agent Jeffrey L. Costellia
- Priority: JP2012-105278 20120502
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H01L27/02 ; H03K3/03

Abstract:
When a semiconductor device is provided with an inverter comprising a transistor having a first gate and a second gate, the semiconductor device does not require a circuit for generating a potential to be input to the second gate of the transistor and has a small number of wirings. Moreover, a semiconductor device having high reliability is provided. The semiconductor device includes a plurality of stages of circuits each provided with two inverter circuits in parallel. Two inverter circuits in a given stage output respective signals of opposite polarities, which is utilized for interchanging signals output from inverter circuits in the previous stage. Thus, an inverted signal is input to the second gate of the transistor included in each of two inverter circuits in the subsequent stage.
Public/Granted literature
- US20130292669A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-11-07
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