Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13920499Application Date: 2013-06-18
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Publication No.: US08866530B2Publication Date: 2014-10-21
- Inventor: Toshiki Seshita
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-265311 20101129
- Main IPC: H03K3/02
- IPC: H03K3/02 ; H01L27/12

Abstract:
According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.
Public/Granted literature
- US20130293279A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-11-07
Information query
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