Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13788257Application Date: 2013-03-07
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Publication No.: US08866535B2Publication Date: 2014-10-21
- Inventor: Kazuto Takao
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-170279 20120731
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/56

Abstract:
According to one embodiment, a semiconductor device includes: a first switching element; a first interconnection; a first resistor; and a second interconnection. The first switching element includes a first control terminal, a first electrode terminal, and a first conductor terminal. The second switching element includes a second control terminal, a second electrode terminal, and a second conductor terminal. The first interconnection includes a first through a fourth interterminal interconnections. The first resistor is connected at a first end to the first control terminal. The second resistor is connected at a first end to the second control terminal and is connected at a second end to a second end of the first resistor. The second interconnection is provided between the first electrode terminal and the second electrode terminal and/or between the first control terminal and the second control terminal.
Public/Granted literature
- US20140035656A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-02-06
Information query
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