Invention Grant
US08867177B2 Magnetic sensor having improved resistance to thermal stress induced instability
有权
具有改善的耐热应力诱发不稳定性的磁传感器
- Patent Title: Magnetic sensor having improved resistance to thermal stress induced instability
- Patent Title (中): 具有改善的耐热应力诱发不稳定性的磁传感器
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Application No.: US12914926Application Date: 2010-10-28
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Publication No.: US08867177B2Publication Date: 2014-10-21
- Inventor: Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
- Applicant: Satoru Araki , Hardayal S. Gill , Hiroaki Chihaya , Dustin W. Erickson , Haiwen Xi , Chang Man Park
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/39 ; G11B5/31 ; B82Y25/00 ; G01R33/09 ; G11B5/60

Abstract:
A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.
Public/Granted literature
- US20120106006A1 MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY Public/Granted day:2012-05-03
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