Invention Grant
- Patent Title: ESD protection techniques
- Patent Title (中): ESD保护技术
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Application No.: US13217533Application Date: 2011-08-25
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Publication No.: US08867183B2Publication Date: 2014-10-21
- Inventor: Bo-Ting Chen , Tzu-Heng Chang
- Applicant: Bo-Ting Chen , Tzu-Heng Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit that is electrically connected to first and second circuit nodes from an ESD event. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including first and second ESD detection elements arranged thereon. The ESD protection device also includes first and second voltage bias elements having respective inputs electrically connected to respective outputs of the first and second ESD detection elements. A second electrical path extends between the first and second circuit nodes and is in parallel with the first electrical path. The second electrical path includes a voltage controlled shunt network having at least two control terminals electrically connected to respective outputs of the first and second voltage bias elements. Other embodiments are also disclosed.
Public/Granted literature
- US20130050885A1 ESD PROTECTION TECHNIQUES Public/Granted day:2013-02-28
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