A semiconductor device includes plural memory cells each having a first inverter and a second inverter, with an input of the first inverter being coupled to an output of the second inverter and an input of the second inverter being coupled to an output of the first inverter. The first and second inverters have drive transistors supplied with a source voltage where the source voltage is raised in response to a level shift of a control signal supplied to a switch of a control circuit. The control circuit further includes a resistance element in parallel with a MOS transistor connected as a diode.