Invention Grant
US08867263B2 Multiport memory with matching address and data line control 有权
具有匹配地址和数据线控制的多端口存储器

Multiport memory with matching address and data line control
Abstract:
In a multiple port SRAM, a first bit cell is coupled to first and second word lines and a first and second bit line pair. A first data line pair is coupled to the first bit line pair via first switching logic. A second data line pair is coupled to the first bit line pair via second switching logic and to the second bit line pair via third switching logic. If a row address match but not a column address match exists between a first and second access address, the second switching logic selectively connects the second data line pair with the first bit line pair based on a first decoded signal generated from the column address of the second access address and the third switching logic decouples the second data line pair from the second bit line pair.
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