Invention Grant
- Patent Title: Multiport memory with matching address and data line control
- Patent Title (中): 具有匹配地址和数据线控制的多端口存储器
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Application No.: US13740862Application Date: 2013-01-14
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Publication No.: US08867263B2Publication Date: 2014-10-21
- Inventor: Perry H. Pelley
- Applicant: Perry H. Pelley
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.; Joanna G. Chiu
- Main IPC: G11C11/412
- IPC: G11C11/412 ; G11C7/12 ; G11C7/18

Abstract:
In a multiple port SRAM, a first bit cell is coupled to first and second word lines and a first and second bit line pair. A first data line pair is coupled to the first bit line pair via first switching logic. A second data line pair is coupled to the first bit line pair via second switching logic and to the second bit line pair via third switching logic. If a row address match but not a column address match exists between a first and second access address, the second switching logic selectively connects the second data line pair with the first bit line pair based on a first decoded signal generated from the column address of the second access address and the third switching logic decouples the second data line pair from the second bit line pair.
Public/Granted literature
- US20140198561A1 MULTIPORT MEMORY WITH MATCHING ADDRESS AND DATA LINE CONTROL Public/Granted day:2014-07-17
Information query