Invention Grant
US08867267B2 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
有权
存储器件，存储器件结构，结构，存储器件形成方法，电流传导器件和存储器单元编程方法
- Patent Title: Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
- Patent Title (中): 存储器件，存储器件结构，结构，存储器件形成方法，电流传导器件和存储器单元编程方法
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Application No.: US13292932Application Date: 2011-11-09
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Publication No.: US08867267B2Publication Date: 2014-10-21
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C11/36
- IPC: G11C11/36 ; G11C11/56 ; H01L27/24 ; H01L45/00 ; G11C13/00
Abstract:
Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.
Public/Granted literature
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