Invention Grant
- Patent Title: Three dimensional (3D) memory device sparing
- Patent Title (中): 三维(3D)存储设备备用
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Application No.: US13523091Application Date: 2012-06-14
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Publication No.: US08869007B2Publication Date: 2014-10-21
- Inventor: Edgar R. Cordero , Anil B. Lingambudi , Saravanan Sethuraman , Kenneth L. Wright
- Applicant: Edgar R. Cordero , Anil B. Lingambudi , Saravanan Sethuraman , Kenneth L. Wright
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/44 ; H03M13/05

Abstract:
According to one embodiment of the present invention, a method for operating a three dimensional (“3D”) memory device includes detecting, by a memory controller, a first error on the 3D memory device and detecting, by the memory controller, a second error in a first chip in a first rank of the 3D memory device, wherein the first chip has an associated first chip select. The method also includes powering up a second chip in a second rank, sending a command from the memory controller to the 3D memory device to replace the first chip in the first chip select with the second chip and correcting the first error using an error control code.
Public/Granted literature
- US20130339820A1 THREE DIMENSIONAL (3D) MEMORY DEVICE SPARING Public/Granted day:2013-12-19
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