Structure and methods for a semiconductor transistor design. The transistor structure comprises a field effect transistor having a multi-finger gate and three or more diffusion regions. Each diffusion region is identified as either a source region or a drain region, and each diffusion region is further identified as either an inner diffusion region or an outer diffusion region. Electrical contacts are established in the inner diffusion regions and the outer diffusion regions. There are approximately twice as many contacts in an inner source region as in the outer source region. There are approximately twice as many contacts in an inner drain region as in the outer drain region. The number and locations of contacts in each diffusion region are adjusted to reduce the difference among source node voltages of all fingers and the difference among drain node voltages of all fingers.