Invention Grant
- Patent Title: Stretch dummy cell insertion in FinFET process
- Patent Title (中): FinFET过程中的拉伸虚拟细胞插入
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Application No.: US13833958Application Date: 2013-03-15
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Publication No.: US08869090B2Publication Date: 2014-10-21
- Inventor: Li-Sheng Ke , Min-Yuan Tsai , Jia-Rong Hsu , Hung-Lung Lin , Wen-Ju Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/66

Abstract:
A method embodiment includes identifying an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins and outside a minimum spacing boundary, applying a grid map over the empty region, wherein the grid map comprises a plurality of grids inside the empty region, and filling the empty region with a plurality of dummy fin cells by placing a dummy fin cell in each of the plurality of grids, wherein applying the grid map and filling the empty region is performed using a computer.
Public/Granted literature
- US20140258961A1 Stretch Dummy Cell Insertion in FinFET Process Public/Granted day:2014-09-11
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