Invention Grant
US08869090B2 Stretch dummy cell insertion in FinFET process 有权
FinFET过程中的拉伸虚拟细胞插入

Stretch dummy cell insertion in FinFET process
Abstract:
A method embodiment includes identifying an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins and outside a minimum spacing boundary, applying a grid map over the empty region, wherein the grid map comprises a plurality of grids inside the empty region, and filling the empty region with a plurality of dummy fin cells by placing a dummy fin cell in each of the plurality of grids, wherein applying the grid map and filling the empty region is performed using a computer.
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