Invention Grant
- Patent Title: Cleaning nozzle for advanced lithography process
- Patent Title (中): 清洁喷嘴用于先进的光刻工艺
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Application No.: US13216310Application Date: 2011-08-24
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Publication No.: US08873020B2Publication Date: 2014-10-28
- Inventor: Ching-Hai Yang , Shang-Sheng Li
- Applicant: Ching-Hai Yang , Shang-Sheng Li
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/32
- IPC: G03B27/32 ; B05B17/04 ; H01L21/67 ; B05B15/02

Abstract:
The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a lithography tool. The lithography tool includes: a first nozzle configured to dispense a developer solution to a wafer; a second nozzle configured to dispense a cleaning solution to the first nozzle; and a controller configured to operate the second nozzle according to a predefined program. The present disclosure also provides a method of fabricating a semiconductor device. The method includes performing a developing process, wherein the performing the developing process includes dispensing a developer solution on a wafer using a first nozzle. The method also includes cleaning the first nozzle with a second nozzle, wherein the cleaning the first nozzle is executed according to one of a plurality of program recipes that each specify a sequence and a duration for which the first nozzle and the second nozzle are to be selectively activated.
Public/Granted literature
- US20130052591A1 CLEANING NOZZLE FOR ADVANCED LITHOGRAPHY PROCESS Public/Granted day:2013-02-28
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