Invention Grant
US08875363B2 Thin film capacitors on metal foils and methods of manufacturing same 有权
金属箔上的薄膜电容器及其制造方法

Thin film capacitors on metal foils and methods of manufacturing same
Abstract:
Disclosed are methods of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A first dielectric layer is formed over the metal foil by physical vapor deposition, and a dielectric precursor layer is formed over the first dielectric layer by chemical solution deposition. The metal foil, first dielectric layer and dielectric precursor layer are prefired at a prefiring temperature in the range of 350 to 650° C. The prefired dielectric precursor layer, the first dielectric layer and the base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C.
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