Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
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Application No.: US12382331Application Date: 2009-03-13
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Publication No.: US08875656B2Publication Date: 2014-11-04
- Inventor: Tadashi Kontani , Tetsuo Yamamoto , Nobuhito Shima , Nobuo Ishimaru
- Applicant: Tadashi Kontani , Tetsuo Yamamoto , Nobuhito Shima , Nobuo Ishimaru
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2008-094503 20080401; JP2009-011769 20090122
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/452 ; C23C16/34 ; C23C16/455

Abstract:
A substrate processing apparatus includes a processing chamber in which a substrate is mounted, a gas supply unit that supplies processing gas into the processing chamber, a gas exhaust unit that exhausts atmospheric gas in the processing chamber, first and second electrodes to which high-frequency power is applied to set the processing gas to an active state. Each of the first and second electrodes includes a core wire formed of a metal and plural pipe bodies that are joined to one another through the core wire so as to be bendable, and less thermally deformed than the core wire.
Public/Granted literature
- US20090241835A1 Substrate processing apparatus Public/Granted day:2009-10-01
Information query
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