Invention Grant
- Patent Title: Apparatus and method for washing polycrystalline silicon
- Patent Title (中): 洗涤多晶硅的装置和方法
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Application No.: US12929585Application Date: 2011-02-02
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Publication No.: US08875720B2Publication Date: 2014-11-04
- Inventor: Kazuhiro Sakai , Tetsuya Atsumi , Yukiyasu Miyata
- Applicant: Kazuhiro Sakai , Tetsuya Atsumi , Yukiyasu Miyata
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2008-303822 20081128
- Main IPC: B08B3/04
- IPC: B08B3/04 ; H01L21/677 ; C01B33/037
Abstract:
Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.
Public/Granted literature
- US20110120506A1 Apparatus and method for washing polycrystalline silicon Public/Granted day:2011-05-26
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