Invention Grant
- Patent Title: Chromic oxide powder for sputtering target, and sputtering target manufactured from such chromic oxide powder
- Patent Title (中): 用于溅射靶的氧化铬粉末和由这种氧化铬粉末制造的溅射靶
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Application No.: US11916301Application Date: 2006-03-10
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Publication No.: US08877021B2Publication Date: 2014-11-04
- Inventor: Hideo Takami , Masataka Yahagi
- Applicant: Hideo Takami , Masataka Yahagi
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2005-175224 20050615
- International Application: PCT/JP2006/304737 WO 20060310
- International Announcement: WO2006/134694 WO 20061221
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C25B9/00 ; C25B11/00 ; C25B13/00 ; C04B35/00 ; C09D5/23 ; H01F1/00 ; H01L29/12 ; C22C32/00 ; C01G37/033 ; C23C14/34 ; C04B35/645 ; C04B35/12 ; C04B35/626

Abstract:
Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.
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