Invention Grant
- Patent Title: Semiconductor structures and method for fabricating the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US12956209Application Date: 2010-11-30
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Publication No.: US08877323B2Publication Date: 2014-11-04
- Inventor: Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
- Applicant: Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
- Applicant Address: TW Sinshih Township, Tainan County
- Assignee: Himax Technologies Limited
- Current Assignee: Himax Technologies Limited
- Current Assignee Address: TW Sinshih Township, Tainan County
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: B32B3/20
- IPC: B32B3/20 ; B32B3/00 ; B32B27/14 ; H01L23/00 ; B32B7/14 ; B32B17/06 ; B32B37/12
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a first substrate, a second substrate opposite to the first substrate, a plurality of spacers disposed between the first substrate and the second substrate, and an adhesive material bonded with the first substrate and the second substrate within the two adjacent spacers. The invention also provides a method for fabricating the semiconductor structure.
Public/Granted literature
- US20120135201A1 Semiconductor Structures and Method for Fabricating the Same Public/Granted day:2012-05-31
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