Invention Grant
- Patent Title: Ferroelectric film containing a perovskite structure oxide and method for manufacturing a ferroelectric film
- Patent Title (中): 含有钙钛矿结构氧化物的铁电体膜及制造铁电体膜的方法
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Application No.: US13749770Application Date: 2013-01-25
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Publication No.: US08877520B2Publication Date: 2014-11-04
- Inventor: Takeshi Kijima , Yuuji Honda , Haruhito Hayakawa , Takekazu Shigenai
- Applicant: Youtec Co., Ltd.
- Applicant Address: JP Chiba
- Assignee: Youtec Co., Ltd
- Current Assignee: Youtec Co., Ltd
- Current Assignee Address: JP Chiba
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2012-15597 20120127
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L41/187 ; H01L41/319 ; H01L41/39 ; H01L41/318
Abstract:
A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.
Public/Granted literature
- US20130192878A1 FERROELECTRIC FILM, ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING FERROELECTRIC FILM Public/Granted day:2013-08-01
Information query
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