Invention Grant
- Patent Title: Method for forming vertical type sensor
- Patent Title (中): 垂直型传感器的形成方法
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Application No.: US14242109Application Date: 2014-04-01
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Publication No.: US08877535B2Publication Date: 2014-11-04
- Inventor: Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
- Applicant: National Chiao Tung University
- Applicant Address: TW Hsinchu
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsinchu
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW99134543A 20101011
- Main IPC: G01R19/00
- IPC: G01R19/00 ; H01L29/08 ; H01L29/04 ; G01N33/543 ; H01L51/05 ; G01N27/327 ; G01N27/414

Abstract:
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
Public/Granted literature
- US20140213006A1 METHOD FOR FORMING VERTICAL TYPE SENSOR Public/Granted day:2014-07-31
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