Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13458363Application Date: 2012-04-27
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Publication No.: US08877577B2Publication Date: 2014-11-04
- Inventor: Xinpeng Wang
- Applicant: Xinpeng Wang
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Koppel, Patrick, Heybl & Philpott
- Agent Michael J. Ram
- Priority: CN201110131053 20110520
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L29/66
Abstract:
A semiconductor device and method for manufacturing the same are provided. A substrate with an active area and a first interlayer dielectric formed over the substrate is provided. The first interlayer dielectric has a first opening exposing a portion of a surface of the active area, the first opening being filled with a fill material. A second interlayer dielectric is formed over the first interlayer dielectric with a second opening substantially exposing an upper portion of the fill material in the corresponding first opening. The fill material is then removed and the first opening and the second opening are filled with a conductive material to form a contact.
Public/Granted literature
- US20120292674A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-11-22
Information query
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