Invention Grant
- Patent Title: Epitaxial growth of doped film for source and drain regions
- Patent Title (中): 用于源极和漏极区域的掺杂膜的外延生长
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Application No.: US13829770Application Date: 2013-03-14
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Publication No.: US08877592B2Publication Date: 2014-11-04
- Inventor: Chun Hsiung Tsai , Jian-An Ke , Tsan-Yao Chen , Chin-Kun Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66

Abstract:
Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.
Public/Granted literature
- US20140273379A1 EPITAXIAL GROWTH OF DOPED FILM FOR SOURCE AND DRAIN REGIONS Public/Granted day:2014-09-18
Information query
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