Invention Grant
- Patent Title: Semiconductor device including an asymmetric feature, and method of making the same
- Patent Title (中): 包括非对称特征的半导体器件及其制造方法
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Application No.: US13194980Application Date: 2011-07-31
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Publication No.: US08877593B2Publication Date: 2014-11-04
- Inventor: Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
- Applicant: Josephine Chang , Isaac Lauer , Chung-Hsun Lin , Jeffrey Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/8238 ; H01L21/8234 ; H01L21/66
Abstract:
A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.
Public/Granted literature
- US20130026465A1 SEMICONDUCTOR DEVICE INCLUDING AN ASYMMETRIC FEATURE, AND METHOD OF MAKING THE SAME Public/Granted day:2013-01-31
Information query
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