In various embodiments, a method of patterning a substrate may include: forming an auxiliary layer on or above a substrate and forming a plasma etch mask layer on or above the auxiliary layer, wherein the auxiliary layer is configured such that it may be removed from the substrate more easily than the plasma etch mask layer; patterning the plasma etch mask layer and the auxiliary layer such that at least a portion of the substrate is exposed; patterning the substrate by means of a plasma etch process using the patterned plasma etch mask layer as a plasma etch mask.