Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12894987Application Date: 2010-09-30
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Publication No.: US08877613B2Publication Date: 2014-11-04
- Inventor: Tadashi Munakata , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
- Applicant: Tadashi Munakata , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
- Applicant Address: JP Kawasaki-shi JP Chitose-shi
- Assignee: Renesas Electronics Corporation,Renesas Northern Japan Semiconductor, Inc.
- Current Assignee: Renesas Electronics Corporation,Renesas Northern Japan Semiconductor, Inc.
- Current Assignee Address: JP Kawasaki-shi JP Chitose-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2002-211939 20020722
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/00 ; H01L21/56 ; H01L21/67 ; H01L23/31
Abstract:
A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate.
Public/Granted literature
- US20110020984A1 Method of Manufacturing A Semiconductor Device Public/Granted day:2011-01-27
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