Invention Grant
- Patent Title: Interconnect arrangement and associated production methods
- Patent Title (中): 互连安排和相关生产方式
-
Application No.: US13110022Application Date: 2011-05-18
-
Publication No.: US08877631B2Publication Date: 2014-11-04
- Inventor: Manfred Engelhardt , Werner Pamler , Guenther Schindler
- Applicant: Manfred Engelhardt , Werner Pamler , Guenther Schindler
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Priority: DE102005008476 20050224
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L27/108

Abstract:
An interconnect arrangement and fabrication method are described. The interconnect arrangement includes an electrically conductive mount substrate, a dielectric layer formed on the mount substrate, and an electrically conductive interconnect formed on the dielectric layer. At least a portion of the dielectric layer under the interconnect contains a cavity. To fabricate the interconnect arrangement, a sacrificial layer is formed on the mount substrate and the interconnect layer is formed on the sacrificial layer. The interconnect layer and the sacrificial layer are structured to produce a structured interconnect on the structured sacrificial layer. A porous dielectric layer is formed on a surface of the mount substrate and of the structured interconnect as well as the sacrificial layer. The sacrificial layer is then removed to form the cavity under the interconnect.
Public/Granted literature
- US20110217839A1 Interconnect arrangement and associated production methods Public/Granted day:2011-09-08
Information query
IPC分类: