Invention Grant
US08877633B2 Methods of forming a barrier system containing an alloy of metals introduced into the barrier system, and an integrated circuit product containing such a barrier system
有权
形成包含引入到屏障系统中的金属合金的阻挡系统的方法，以及包含这种屏障系统的集成电路产品
- Patent Title: Methods of forming a barrier system containing an alloy of metals introduced into the barrier system, and an integrated circuit product containing such a barrier system
- Patent Title (中): 形成包含引入到屏障系统中的金属合金的阻挡系统的方法，以及包含这种屏障系统的集成电路产品
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Application No.: US13852084Application Date: 2013-03-28
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Publication No.: US08877633B2Publication Date: 2014-11-04
- Inventor: Xunyuan Zhang , Hoon Kim , Vivian W. Ryan
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/532 ; H01L23/522
Abstract:
One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier system comprised of at least one barrier material and at least two metallic elements, and performing a heating process to form a metal alloy comprised of the at least two metallic elements in the barrier system. Also disclosed is a device that comprises a trench/via in a layer of insulating material, a barrier system positioned in the trench/via, wherein the barrier system comprises at least one barrier material and a metal alloy comprised of at least two metallic elements that are comprised of materials other than the at least one barrier material, and a conductive structure positioned in the trench/via above the barrier system.
Public/Granted literature
Information query
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