Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern

Invention Grant

US08877634B2 Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern 有权

Title translation: 在基板上形成精细图案的方法以及形成具有精细图案的半导体器件的方法

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Patent Title: Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern
Patent Title (中): 在基板上形成精细图案的方法以及形成具有精细图案的半导体器件的方法
Application No.: US13720170

Application Date: 2012-12-19
Publication No.: US08877634B2

Publication Date: 2014-11-04
Inventor: Dong-Woon Shin , Bong-Hyun Kim , Su-Min Kim , Hyo-Jung Kim , Chang-Min Park , Soo-Jin Hong
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, PA
Priority: KR10-2012-0035558 20120405
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/768 ; H01L21/308 ; H01L21/033 ; H01L27/108 ; H01L21/311

Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern

Abstract:

The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract(Chinese):

本发明构思提供制造具有精细图案的半导体器件的方法。在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。

Public/Granted literature

US20130267092A1 Methods of Forming a Fine Pattern on a Substrate and Methods of Forming a Semiconductor Device Having a Fine Pattern Public/Granted day:2013-10-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）