Invention Grant
US08878048B2 Solar cell structure including a silicon carrier containing a by-pass diode
有权
太阳能电池结构包括含有旁路二极管的硅载体
- Patent Title: Solar cell structure including a silicon carrier containing a by-pass diode
- Patent Title (中): 太阳能电池结构包括含有旁路二极管的硅载体
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Application No.: US12781219Application Date: 2010-05-17
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Publication No.: US08878048B2Publication Date: 2014-11-04
- Inventor: Frank F. Ho , Charles Hyunsang Suh
- Applicant: Frank F. Ho , Charles Hyunsang Suh
- Applicant Address: US IL Chicago
- Assignee: The Boeing Company
- Current Assignee: The Boeing Company
- Current Assignee Address: US IL Chicago
- Agent Kevin G. Fields
- Main IPC: H01L31/042
- IPC: H01L31/042 ; H01L31/18 ; H01L27/142 ; H01L31/0687 ; H01L31/0725 ; H01L31/02 ; H01L31/0735

Abstract:
A solar cell structure including a silicon carrier defining a front side and a back side, and including an N-type portion having an exposed portion on the front side of the carrier and a P-type portion having an exposed portion on the front side of the carrier, the N-type portion and the P-type portion defining a P-N junction, and a solar cell defining a front side and a back side, wherein the solar cell is connected to the front side of the carrier such that the back side of the solar cell is electrically coupled to the exposed portion of the N-type portion, and wherein the front side of the solar cell is electrically coupled to the exposed portion of the P-type portion.
Public/Granted literature
- US20110277820A1 Solar Cell Structure Including A Silicon Carrier Containing A By-Pass Diode Public/Granted day:2011-11-17
Information query
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