Invention Grant
- Patent Title: Efficient nanoscale solar cell and fabrication method
- Patent Title (中): 高效纳米级太阳能电池及其制造方法
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Application No.: US12852991Application Date: 2010-08-09
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Publication No.: US08878055B2Publication Date: 2014-11-04
- Inventor: Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
- Applicant: Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/052 ; H01L31/0236 ; H01L31/0352
Abstract:
A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
Public/Granted literature
- US20120031454A1 EFFICIENT NANOSCALE SOLAR CELL AND FABRICATION METHOD Public/Granted day:2012-02-09
Information query
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