Invention Grant
US08878153B2 Variable resistance element having gradient of diffusion coefficient of ion conducting layer 有权
具有离子传导层扩散系数梯度的可变电阻元件

  • Patent Title: Variable resistance element having gradient of diffusion coefficient of ion conducting layer
  • Patent Title (中): 具有离子传导层扩散系数梯度的可变电阻元件
  • Application No.: US13514385
    Application Date: 2010-12-06
  • Publication No.: US08878153B2
    Publication Date: 2014-11-04
  • Inventor: Yukihide Tsuji
  • Applicant: Yukihide Tsuji
  • Applicant Address: JP Tokyo
  • Assignee: NEC Corporation
  • Current Assignee: NEC Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2009-278446 20091208
  • International Application: PCT/JP2010/071811 WO 20101206
  • International Announcement: WO2011/071009 WO 20110616
  • Main IPC: H01L29/02
  • IPC: H01L29/02 H01L27/10 H01L45/00
Variable resistance element having gradient of diffusion coefficient of ion conducting layer
Abstract:
A structure for a variable-resistance element using an electrochemical reaction. The structure limits a position at which metal cross-linking breaks to a position most preferred for cross-linking break: namely, a part of an ion conduction layer closest to a first electrode. Also provided is a method for manufacturing the variable-resistance element, which has a first electrode serving as a source for a metal ion(s), a second electrode which is less ionizable (i.e. has a higher redox potential) than the first electrode, and an ion conduction layer which is interposed between the first and second electrodes and can conduct the metal ion(s). There is a first region in the ion conduction layer, adjacent to the first electrode, having a diffusion coefficient that increases continuously towards the first electrode right upto contacting the first electrode.
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