Invention Grant
- Patent Title: Optoelectronic semiconductor device
- Patent Title (中): 光电半导体器件
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Application No.: US13885659Application Date: 2011-11-08
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Publication No.: US08878170B2Publication Date: 2014-11-04
- Inventor: Klaus Hoehn
- Applicant: Klaus Hoehn
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102010051959 20101119
- International Application: PCT/EP2011/069672 WO 20111108
- International Announcement: WO2012/065882 WO 20120524
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L33/62 ; H01L33/48

Abstract:
An optoelectronic semiconductor device has a carrier foil that includes a first surface and a second surface opposite the first surface. At least one electrically conductive contact layer is arranged on the first surface and covers the first surface in places and contains at least one metal. At least one radiation-emitting optoelectronic semiconductor component is arranged on an outer face, remote from the carrier foil, of the electrically conductive contact layer. The radiation-emitting, optoelectronic semiconductor component is electrically conductively connected to the at least one electrically conductive contact layer. The carrier foil is formed with at least one polymer or contains at least one polymer. At least one monomer of the polymer is formed with at least one C—F bond, with C denoting carbon and F fluorine.
Public/Granted literature
- US20130307015A1 Optoelectronic Semiconductor Device Public/Granted day:2013-11-21
Information query
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